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HOME > PRODUCT > ¿þÀÌÇÁ&¾àÇ°·ù
WAFER / Thermal Oxidation Wafer
 
 

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¢¹Diameter : 4£¢¡­ 8£¢
¢¹Dopant : P type or N type
¢¹Crystal Orientation : £¼100£¾,£¼111£¾
¢¹Thickness :
¢¹Resistivity :
¢¹Wet Thermal Oxide Thickness : 3000¡Ê¡­20000¡Ê(2§­)

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LW-100-01 - Å©±â£º4£¢ ŸÀÔ£ºPÇü, ¹æÇ⣺£¼100£¾, µÎ²²£º1000¡¾25§­, ÀúÇ×£º1¡­20¥Ø.§¯, Oxide µÎ²²£º1§­(10,000¡Ê) °ßÀû ¹®ÀÇ
LW-100-02 - Å©±â£º4£¢ ŸÀÔ£ºPÇü, ¹æÇ⣺£¼100£¾, µÎ²²£º525¡¾25§­, ÀúÇ×£º1¡­30¥Ø.§¯, Oxide µÎ²²£º0.5§­ °ßÀû ¹®ÀÇ
LW-100-03 - Å©±â£º4£¢ ŸÀÔ£ºPÇü, ¹æÇ⣺£¼100£¾, µÎ²²£º525¡¾25§­, ÀúÇ×£º1¡­20¥Ø.§¯, Oxide µÎ²²£º0.3§­ °ßÀû ¹®ÀÇ
WAFER / Undoped Silicon Wafer
 
 

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¢¹Single Side Polishing (SSP)

¢¹Notch type

¢¹Type/Dopand : P/Undoped

¢¹Crystal Orientation : <100>

¢¹Resistivity : >10,000§Ù-§¯

   
LUW-800-01 - ±¸°æ:8ÀÎÄ¡, Type:P, ¹æÇâ:£¼100£¾, µÎ²²:680~710§­, ÀúÇ×:>10,000§Ùcm, SSP, Notch 370,000(VATº°µµ)
ZEON / E-Beam Lithography Resist
 
 

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¢¹High resolution (sub-10-nm)

¢¹Excellent etch resistance – dry and wet etch

¢¹High sensitivity

¢¹Strong adhesion to most substrates

¢¹Thermal stability

¢¹High contrast

¢¹High aspect ratio

¢¹Processing stability

¢¹No post exposure bake

¢¹​Shipping and storage at room temperature

¢¹Post coat delay

¢¹Post exposure delay

 


 

 

   
Z0-1001-01 ZEP520A Viscosity : 11mPa/s, 100ml/bottle °ßÀû ¹®ÀÇ
ZO-1001-02 ZEP530A Viscosity : 6cp, Volume : 1qt/bottle 32,700,000(VATº°µµ)
ZO-2001-11 ZED-N50 Developer, High sensitivity, Volume : 1ga/bottle 800,000(VATº°µµ)
ZO-2001-12 ZED-N60 Developer, High sensitivity, 1ga/bottle 800,000(VATº°µµ)
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