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WAFER / Sapphire Wafer
 
 

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¢¹Orientation(M-axis) : C 0.2¢ªoff¡¾0.05¢ª  

¢¹Diameter : 50.8¡¾0.05mm 

¢¹OF length : 16¡¾1.5mm 

¢¹Thickness : 430¡¾20um  

¢¹Bow : 5 ~ -10um  

¢¹TTV: ¡Â7um 

¢¹Frontside Roughness : RA ¡Â 2¡Ê 

¢¹Backside Roughness : 0.6um¡Â RA ¡Â1.2um 

 

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LW-6100-01 - 2inch Sapphire Wafer °ßÀû ¹®ÀÇ
WAFER / Silicon Wafer #2012-L82
 
 
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¢¹2ÀÎÄ¡(50mm) ¡­ 12ÀÎÄ¡(300mm)ÀÇ Prime, Test, Dumy gradeµî °¢Á¾ Si Wafer Ãë±Þ ¹× Àç°í¸¦ È®º¸ÇÏ°í ÀÖÀ¸¸ç, °¡°ø ¼­ºñ½ºµµ °¡´ÉÇÕ´Ï´Ù.
¢¹Æ÷Àå´ÜÀ§ : 25Àå/Ä«¼¼Æ®, 24Àå/Ä«¼¼Æ®
¡Ø±âº»»ç¾ç ÀÌ¿ÜÀÇ Á¦Ç°Àº ¹®ÀÇÇÏ¿© Áֽʽÿä.
   
LW-200-01 - ±¸°æ£º2ÀÎÄ¡, Test±Þ, Type£ºP, ¹æÇâ:£¼100£¾, µÎ²²£º260¡­300§­, ÀúÇ×£º1¡­20§Ùcm, °ßÀû ¹®ÀÇ
LW-300-01 - ±¸°æ£º3ÀÎÄ¡, Test±Þ, Type£ºP, ¹æÇâ:£¼100£¾, µÎ²²£º355¡­405§­, ÀúÇ×£º1¡­20§Ùcm, SSP °ßÀû ¹®ÀÇ
LW-400-01 - ±¸°æ£º4ÀÎÄ¡, Test±Þ, Type£ºP, ¹æÇâ:£¼100£¾, µÎ²²£º500¡­550§­, ÀúÇ×£º1¡­30§Ùcm, SSP °ßÀû ¹®ÀÇ
LW-600-01 - ±¸°æ£º6ÀÎÄ¡, Test±Þ, Type£ºP, ¹æÇâ:£¼100£¾, µÎ²²£º650¡­700§­, ÀúÇ×£º1¡­30§Ùcm, SSP °ßÀû ¹®ÀÇ
LW-800-01 - ±¸°æ£º8ÀÎÄ¡, Test±Þ, Type£ºP, ¹æÇâ:£¼100£¾, µÎ²²£º695¡­755§­, ÀúÇ×£º3¡­30§Ùcm, SSP °ßÀû ¹®ÀÇ
LW-410-01 - ±¸°æ£º4ÀÎÄ¡, Prime±Þ, Type£ºP, ¹æÇâ:£¼100£¾, µÎ²²£º500¡­550§­, ÀúÇ×£º1¡­30§Ùcm, SSP °ßÀû ¹®ÀÇ
LW-610-01 - ±¸°æ£º6ÀÎÄ¡, Prime±Þ, Type£ºP, ¹æÇâ:£¼100£¾, µÎ²²£º650¡­700§­, ÀúÇ×£º5¡­10§Ùcm, SSP °ßÀû ¹®ÀÇ
LW-810-01 - ±¸°æ£º8ÀÎÄ¡, Prime±Þ, Type£ºP, ¹æÇâ:£¼100£¾, µÎ²²£º260¡­300§­, ÀúÇ×£º3¡­30§Ùcm, SSP °ßÀû ¹®ÀÇ
LW-500-01 - ±¸°æ£º4ÀÎÄ¡, Prime±Þ, Type£ºN, ¹æÇâ:£¼100£¾, µÎ²²£º525¡¾25§­, ÀúÇ×£º1¡­10§Ùcm, SSP °ßÀû ¹®ÀÇ
LW-600-11 - ±¸°æ£º6ÀÎÄ¡, Prime±Þ, Type£ºN, ¹æÇâ:£¼100£¾, µÎ²²£º660~690§­, ÀúÇ×£º5¡­10§Ùcm, SSP °ßÀû ¹®ÀÇ
LW-600-02 - ±¸°æ£º6ÀÎÄ¡, Test±Þ, Type£ºN, ¹æÇâ:£¼100£¾, µÎ²²£º675¡¾25§­, ÀúÇ×£º1¡­30§Ùcm, SSP °ßÀû ¹®ÀÇ
LW-420-01 - ±¸°æ£º4ÀÎÄ¡, Type£ºP, ¹æÇâ:£¼100£¾, µÎ²²£º1000¡¾25§­, ÀúÇ×£º1¡­20§Ùcm, SSP °ßÀû ¹®ÀÇ
LW-620-01 - ±¸°æ£º6ÀÎÄ¡, Type£ºP, ¹æÇâ:£¼100£¾, µÎ²²£º1000¡¾25§­, ÀúÇ×£º1¡­20§Ùcm, SSP °ßÀû ¹®ÀÇ
WAFER / Thermal Oxidation Wafer
 
 

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¢¹Diameter : 4£¢¡­ 8£¢
¢¹Dopant : P type or N type
¢¹Crystal Orientation : £¼100£¾,£¼111£¾
¢¹Thickness :
¢¹Resistivity :
¢¹Wet Thermal Oxide Thickness : 3000¡Ê¡­20000¡Ê(2§­)

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LW-100-01 - Å©±â£º4£¢ ŸÀÔ£ºPÇü, ¹æÇ⣺£¼100£¾, µÎ²²£º1000¡¾25§­, ÀúÇ×£º1¡­20¥Ø.§¯, Oxide µÎ²²£º1§­(10,000¡Ê) °ßÀû ¹®ÀÇ
LW-100-02 - Å©±â£º4£¢ ŸÀÔ£ºPÇü, ¹æÇ⣺£¼100£¾, µÎ²²£º525¡¾25§­, ÀúÇ×£º1¡­30¥Ø.§¯, Oxide µÎ²²£º0.5§­ °ßÀû ¹®ÀÇ
LW-100-03 - Å©±â£º4£¢ ŸÀÔ£ºPÇü, ¹æÇ⣺£¼100£¾, µÎ²²£º525¡¾25§­, ÀúÇ×£º1¡­20¥Ø.§¯, Oxide µÎ²²£º0.3§­ °ßÀû ¹®ÀÇ
WAFER / Undoped Silicon Wafer
 
 

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¢¹Single Side Polishing (SSP)

¢¹Notch type

¢¹Type/Dopand : P/Undoped

¢¹Crystal Orientation : <100>

¢¹Resistivity : >10,000§Ù-§¯

   
LUW-800-01 - ±¸°æ:8ÀÎÄ¡, Type:P, ¹æÇâ:£¼100£¾, µÎ²²:680~710§­, ÀúÇ×:>10,000§Ùcm, SSP, Notch 370,000(VATº°µµ)
ZEON / E-Beam Lithography Resist
 
 

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¢¹High resolution (sub-10-nm)

¢¹Excellent etch resistance – dry and wet etch

¢¹High sensitivity

¢¹Strong adhesion to most substrates

¢¹Thermal stability

¢¹High contrast

¢¹High aspect ratio

¢¹Processing stability

¢¹No post exposure bake

¢¹​Shipping and storage at room temperature

¢¹Post coat delay

¢¹Post exposure delay

 


 

 

   
Z0-1001-01 ZEP520A Viscosity : 11mPa/s, 100ml/bottle °ßÀû ¹®ÀÇ
ZO-1001-02 ZEP530A Viscosity : 6cp, Volume : 1qt/bottle 32,700,000(VATº°µµ)
ZO-2001-11 ZED-N50 Developer, High sensitivity, Volume : 1ga/bottle 800,000(VATº°µµ)
ZO-2001-12 ZED-N60 Developer, High sensitivity, 1ga/bottle 800,000(VATº°µµ)
11.12