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ETCHANT / Secco Etchant
 
 

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¢¹Secco Etchant is conventionally used for delineation of flow pattern defects (FPDs) in lightly-doped Czochralski (Cz) silicon wafers.


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LL4-024-02 - Secco Etchant. Æ÷Àå´ÜÀ§£ºGa, ÃÖ¼Ò ÆǸŠ´ÜÀ§£º4Ga/box, À¯È¿±â°££º1³â °ßÀû ¹®ÀÇ
FURRCHI / Semico Clean 23
 
 

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¢¹¼¼Ã´¿¡ µû¸¥ ºñ¿ëÀ» ´ëÆø »è°¨ÇÒ ¼ö ÀÖ´Â ¸Å¿ì ÇÕ¸®ÀûÀÎ ¹ÝµµÃ¼ ¼¼Á¤Á¦ÀÔ´Ï´Ù.

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¢¹Æ÷Àå´ÜÀ§ : 5kg/btl

   
FC-6200-01 SC-28-1L ¹ÝµµÃ¼ ¼¼Á¤Á¦, Æ÷Àå´ÜÀ§£º5kg/btl 330,000(VATº°µµ)
HACH Chem / Regents For Analyzer
 
 

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¢¹ Regents For Silica Analyzer

¢¹ One unit each of the reagents is sufficient for 30 days of operation.

¢¹ The standard solution is sufficient for 10 calibrations. 

   
HC-001-01 23531-03 Amino Acid F Regent Package. °ßÀû ¹®ÀÇ
HC-002-02 23470-03 Citric Acid-Surfactant 2.9L °ßÀû ¹®ÀÇ
HC-003-03 1995-03 Molybdate 3 Reagent 2.9L °ßÀû ¹®ÀÇ
HC-004-04 21008-03 Silica Standard Solution, SiO2, 500 µg/L, 2.9 L °ßÀû ¹®ÀÇ
JTB / Semiconductor Chemical
 
 

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¢¹ ¹ÝµµÃ¼ °øÁ¤¿ë ¾àÇ°.

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¢¹4L/bt

¢¹45% Solution

¢¹CP Grade 

   
JTB-200-01 - Potassium Hydroxide Solution / CAS No.:1310-58-3 / EG / 45% °ßÀû ¹®ÀÇ
JTB-210-01 - Amonium Fluoride / CAS No.:12125-01-8 / CMOS / 40% °ßÀû ¹®ÀÇ
JTB-220-01 - Amonium Hydroxide / Cas No. 1336-21-6‎ / CMOS / 29% °ßÀû ¹®ÀÇ
JTB-230-01 - Hydrofluoric acide / CAS No.:‎7664-39-3 / CMOS / 48~51% °ßÀû ¹®ÀÇ
JUNSEI / HBr
 
 

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¢¹¹°¿¡ Àß ³ìÀ¸¸ç, 298K¿¡¼­ ¹°¿¡ ¿ëÇØÇÏ¸é ¹° Áß·®ÀÇ 68.85%°¡ ¼ö¼Ò»êÈ­ ÈÄ Æ÷È­»óÅ°¡ µÈ´Ù.

 

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¢¹CASS ¹øÈ£ : 10035-10-6
¢¹ºÐÀÚ·® : 80.91 g/mo¤Ó

¢¹¹Ðµµ : 0.0036452 g/cm3
¢¹²ú´ÂÁ¡ : 206.77 K (-66.38 ¡ÆC, -87.484 ¡ÆF) 

 

   
JS-2428-01 - ¼øµµ£ºEP 47-49%, Æ÷Àå´ÜÀ§£º1kg/bt, ¸ÞÀÌÄ¿£ºJUNSEI °ßÀû ¹®ÀÇ
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