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◆특징
▷ 이미징에 내성이 있을 경우 혼합되지 않습니다. ▷높은 열에 안정성을 보입니다. ( ~190 C) ▷기존의 Conventional Resist Stripper을 빠르고 깔끔하게 제거합니다. ▷높은 산출, 매우 두꺼운(>3µm)금속 리프트 오프 처리를 가능하게 합니다. ▷Sub 0.25μm lift-off processing. |
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◆특징
▷PMMA (polymethyl methacrylate) is a versatile polymeric material that is well suited for many imaging and non-imaging microelectronic applications. ▷Most commonly used as a high resolution positive resist for direct write e-beam as well as x-ray and deep UV microlithographic processes. ▷Also used as a protective coating for wafer thinning, as a bonding adhesive and as a sacrificial layer.
▷Standard PMMA products cover a wide range of film thicknesses and are formulated with 495,000 & 950,000 molecular weight (MW) resins in either chlorobenzene or the safer solvent anisole. ◆사양 ▷All MCC PMMA resists are available in package sizes from 500ml to 20 liters. |
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 MicroResist Technology / Photoresist |
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▷Electron-beam and DUV-sensitive ▷ High wet and dry etch resistance ▷ Good thermal stability ▷ Excellent pattern resolution - down to 30 nm ▷ Aqueous alkaline development ▷ Easy to remove ▷ Resists available in a variety of viscosities
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 ma-N+2400.pdf
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NEPES / SOG(Spin On Glass) |
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◆특징
▷Cospeen-1225G is methyl-siloxane-based organic spin-on-glass coating solution for advanced microelectronic system. ▷Switch right away and enjoy the cost benefit. ▷Ultra high purity ▷Ultra-low particle count ▷High thickness uniformity ▷Low cost-of-ownership ▷Safe solvent system ◆사양 ▷Gap filling : <0.10 μm ▷Planarization : >90% at 1 μm feature ▷Coating thickness : 2300 Å - 4000 Å per coat ▷Bake temperature / time : 80℃/2min ~ 230℃/4min ▷Cure temperature / time : 450℃/30min in N₂ |
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